Ultra High Speed Driver for GaN FET

uPI GaN Driver Family

The uPI family of high speed GaN driver products consists of 3 different devices designed for GaN field effect transistors (FETs) requiring 5V gate drive. There is a single driver, uP1964, and dual channel drivers designed for half bridge topologies, uP1966A, and synchronous rectifier applications, uP1966D.

GaN Applications

48V PoL

Server

Audio

Wireless Power

Industrial

Automotive

Features

uPI GaN Driver

  • Wide input voltage
  • Fast propagation delays
  • Fast rise and fall times
  • CMOS compatible input-logic threshold

Suitable Applications

  • High-speed, synchronous buck converters
  • Class D audio amplifiers
  • 48V Point-of-load
  • Wireless Power
  • LiDAR

uP1964

The uP1964 is a single channel driver that has high source current of 2A and sink current of 5.5A capability offering enhanced immunity against Miller turn-on effect. The uP1964 has split gate outputs, providing the ability to adjust both turn-on and turn-off transition times independently.

This device has an integrated LDO with UVLO function whose output voltage can be adjusted through an external resistor voltage divider. The LDO output can provide both gate drive voltage and power for external circuitry.

The PWM input of this driver is CMOS logic compatible, can operate to several MHz, has an internal pull down, and can withstand an input voltage of up to 5.5V independent of the LDO (supply) voltage. This feature allows the PWM input to be level translated when required.

The uP1964 is available in a 3×3 WDFN package. Operating temperature range is -40°C to +125°C.

uP1966A

The uP1966A is designed to drive both high-side and low-side GaN FETs in half bridge topologies. It integrates an internal bootstrap supply, dead-time control circuit, and UVLO.

The uP1966A has split gate outputs that can operate to several MHz on both high and low side drive channels, providing the ability to adjust both turn-on and turn-off transition times independently and includes pull down resistors on all output pins.

A clamping circuit is used on the high side drive to keep unwanted transients from damaging GaN device gates. The uP1966A has two PWM inputs that independently control high side and low side drive signals.

The uP1966A is available in a 1.6×1.6-12B WLCSP package that minimizes package inductance for improved high-speed operation. Operating temperature range is -40°C to +125°C.

uP1966D

The uP1966D is designed to drive both high-side and low-side GaN FETs in synchronous rectifier topologies.

It integrates an internal bootstrap supply, dead-time control circuit, and UVLO. The uP1966D has split gate outputs that can operate to several MHz on both high and low side drive channels, providing the ability to adjust both turn-on and turn-off transition times independently and includes pull down resistors on all output pins. A clamping circuit is used on the high side drive to keep unwanted transients from damaging GaN device gates.

The uP1966D has a single PWM input that synchronously controls high side and low side drive signals. This device has the ability to independently adjust deadtimes through external resistors.

The uP1966D is available in a 1.6×1.6-12B WLCSP package that minimizes package inductance for improved high-speed operation. Operating temperature range is -40°C to +125°C.

Request for Datasheet or Application Note:

Contact us for more product information:

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